Microwave RF components

Microwave RF components

Application Overview

High-frequency device packaging: Provides stable high-frequency performance, excellent shielding, and mechanical strength for signal control and processing.
RF Switch
An RF switch or microwave switch is a device to route high frequency signals through transmission paths. RF (radio frequency) and microwave switches are used extensively in microwave test systems for signal routing between instruments and devices under test (DUT). Incorporating a switch into a switch matrix system enables you to route signals from multiple instruments to single or multiple DUTs. This allows multiple tests to be performed with the same setup, eliminating the need for frequent connects and disconnects. The entire testing process can be automated, increasing the throughput in high-volume production environments.

Attenuator
An attenuator is a circuit designed to introduce a predetermined attenuation within a specified frequency range. It is typically specified by the number of decibels of attenuation introduced and the ohms of its characteristic impedance. Attenuators are widely used in cable television systems to meet the level requirements of multiple ports. For example, controlling the input and output levels of amplifiers, or controlling the attenuation of branch circuits. Attenuators are classified into passive attenuators and active attenuators. Active attenuators are combined with other thermosensitive components to form variable attenuators, which are installed within amplifiers for automatic gain or slope control circuits. Passive attenuators include fixed attenuators and adjustable attenuators.

PIN Diode
PIN diodes, also known as phase-shifting switch diodes, differ from conventional two-layer PN junction diodes in that they incorporate an I layer: specifically, between the P layer composed of P-type semiconductor material and the N layer composed of N-type semiconductor material in a conventional PN junction diode, an I layer composed of low-doped material with purity approaching that of intrinsic semiconductor material is inserted.